HGTP10N50E1D Intersil Corporation, HGTP10N50E1D Datasheet

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HGTP10N50E1D

Manufacturer Part Number
HGTP10N50E1D
Description
10a, 400v And 500v N-channel Igbts With Anti-parallel Ultrafast Diodes
Manufacturer
Intersil Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTP10N50E1D
Manufacturer:
FAIRCHILD
Quantity:
12 500
April 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 10A, 400V and 500V
• V
• T
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage R
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
HGTP10N40C1D
HGTP10N40E1D
HGTP10N50C1D
HGTP10N50E1D
PART NUMBER
CE(ON)
FALL
: 1 s, 0.5 s
: 2.5V Max.
PACKAGING AVAILABILITY
GE
PACKAGE
TO-220AB
TO-220AB
TO-220AB
TO-220AB
= 1M
C
C
= +25
at T
> +25
|
Copyright
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
= +25
= +90
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
o
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C . . . . . . . . . . . . . . . . . . . . . . . . . I
©
10N40C1D
10N40E1D
10N50C1D
10N50E1D
Intersil Corporation 1999
o
C, Unless Otherwise Specified
HGTP10N40C1D, HGTP10N40E1D,
BRAND
HGTP10N50C1D, HGTP10N50E1D
3-20
Package
Terminal Diagram
10A, 400V and 500V N-Channel IGBTs
J
, T
CGR
CES
STG
C25
C90
GE
with Anti-Parallel Ultrafast Diodes
D
COLLECTOR
(FLANGE)
HGTP10N40C1D
HGTP10N40E1D
N-CHANNEL ENHANCEMENT MODE
-55 to +150
17.5
400
400
0.6
10
75
20
G
JEDEC TO-220AB
C
E
HGTP10N50C1D
HGTP10N50E1D
-55 to +150
EMITTER
17.5
500
500
0.6
File Number
10
75
20
COLLECTOR
GATE
UNITS
W/
2405.5
o
W
V
V
V
A
C
o
C

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HGTP10N50E1D Summary of contents

Page 1

... Motor Drives • Protective Circuits Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching reg- ulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region ...

Page 2

... Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications T = +25 C PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On Voltage Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves 20 10V 100 GE GEN GS 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 -75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175 T , JUNCTION TEMPERATURE ( J FIGURE 1. MAX. SWITCHING CURRENT LEVEL ARE THE MIN. ALLOWABLE VALUES 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 +50 +100 T , JUNCTION TEMPERATURE ( J FIGURE 3 ...

Page 4

... HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves 1200 f = 0.1MHz 1000 800 CISS 600 400 200 COSS CRSS COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE 400 I = 20A 10V 300V = 300 200 100 0 +25 ...

Page 5

... HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves 1000 V = 10V 300V GE CE(CLP) 900 20A, 40E1/50E1 800 700 600 500 400 300 200 100 0 +25 +50 +75 +100 T , JUNCTION TEMPERATURE ( J FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 100 TYPICAL DIODE ON VOLTAGE ...

Page 6

... HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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