MT58L64V36F Micron Semiconductor, MT58L64V36F Datasheet - Page 10

• Manufacturer Part Number: MT58L64V36F
• Description: (MT58LxxxLxxF) 2Mb SRAM
• Manufacturer: Micron Semiconductor

NOT RECOMENDED FOR NEW DESIGNS
I
(Note: 1) (0°C ≤ T
NOTE: 1. V
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. I
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
5. V
6. I
7. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
8. Typical values are measured at 3.3V, 25°C, and 15ns cycle time.
greater output loading.
device is active (not in power-down mode).
greater output loading.
device is active (not in power-down mode).
DD
DD
DD
DD
is specified with no output current and increases with faster cycle times. I
is specified with no output current and increases with faster cycle times. I
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; V
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; V
A
≤ +70°C; V
Device selected; All inputs ≤ V
V
V
Cycle time ≥
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
IH
IH
ADSC#, ADSP#, ADV#, GW#, BWx# ≥
All inputs ≤ V
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
; All inputs ≤ V
; All inputs ≤ V
Device deselected; V
Device deselected; V
Device deselected; V
Device selected; V
V
DD
All inputs ≤ V
Cycle time ≥
Cycle time ≥
DD
= MAX; Outputs open
CONDITIONS
t
= +3.3V +0.3V/-0.165V unless otherwise noted)
KC (MIN); Outputs open
SS
SS
+ 0.2 or ≥ V
SS
+ 0.2 or ≥ V
+ 0.2 or ≥ V
t
t
IL
KC (MIN);
KC (MIN)
or ≥ V
DD
DD
DD
DD
= MAX;
= MAX;
= MAX;
= MAX;
IH
DD
IL
;
DD
DD
or ≥ V
- 0.2;
- 0.2;
- 0.2;
IH
10
FLOW-THROUGH SYNCBURST SRAM
;
DD
DD
SYM
I
I
I
I
I
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
DD
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
SB
SB
SB
DD
2
3
4
1
2Mb: 128K x 18, 64K x 32/36
TYP
0.5
65
20
20
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-6.8
265
70
10
25
70
DD
DD
Q increases with faster cycle times and
Q increases with faster cycle times and
-7.5
245
65
10
25
65
MAX
-8.5
225
65
10
25
65
150
-10
50
10
25
50
UNITS NOTES
©2002, Micron Technology, Inc.
mA
mA
mA
mA
mA
2, 3, 4
2, 3, 4
3, 4
3, 4
3, 4