MT58L256V36F Micron Semiconductor, MT58L256V36F Datasheet - Page 15

• Manufacturer Part Number: MT58L256V36F
• Description: (MT58Lxxxx) 8Mb SYNCBURST SRAM
• Manufacturer: Micron Semiconductor

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
V
Storage Temperature (plastic) .............. -55°C to +150°C
Storage Temperature (FBGA) ................ -55°C to +125°C
Junction Temperature** ........................................ +150°C
Short Circuit Output Current ............................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
NOTE: 1. All voltages referenced to V
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
IN
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
(DQx) .......................................... -0.5V to V
(inputs) .......................................... -0.5V to V
Relative to V
Relative to V
T
2. Overshoot:
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot: V
Power-up:
AC I/O curves are available upon request.
DD
+70°C; V
DD
DD
Q should never exceed V
Q Supply
Supply
SS
SS
..................................... -0.5V to +4.6V
..................................... -0.5V to +4.6V
DD
V
V
, V
IH
IL
IH
DD
-0.7V for t
OH
+4.6V for t
+3.6V and V
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2 for 3.3V I/O. AC load current is higher than the stated DC values.
SS
DD
(GND).
. V
t
DD
Output(s) disabled,
KC/2 for I
t
DD
KC/2 for I
0V
0V
CONDITIONS
and V
I
3.135V for t
OH
I
OL
DD
DD
= -4.0mA
= 8.0mA
Q + 0.5V
V
V
DD
IN
IN
+ 0.5V
Q can be connected together.
20mA
20mA
V
V
DD
DD
200ms
15
FLOW-THROUGH SYNCBURST SRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon
package type, cycle time, loading, ambient tempera-
ture and airflow. See Micron Technical Note TN-05-14
for more information.
SYMBOL
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
IL
V
DD
IL
OH
DD
OL
IH
IL
O
I
Q
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
–
V
DD
MAX
0.8
1.0
1.0
0.4
3.6
3.6
–
+ 0.3
UNITS
µA
µA
©2002, Micron Technology, Inc.
V
V
V
V
V
V
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
3
1