MT8VDDT6464HD Micron Semiconductor Products, MT8VDDT6464HD Datasheet - Page 15

• Manufacturer Part Number: MT8VDDT6464HD
• Description: (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
• Manufacturer: Micron Semiconductor Products

www.DataSheet4U.com
Table 14: I
DDR SDRAM component values only
Notes: 1–5, 8, 10, 12, 50; notes appear on pages 20–23; 0°C £ T
09005aef806e1d28
DD8C16_32_64x64HDG_B.fm - Rev. B 7/03 EN
PARAMETER/CONDITION
NOTE:
OPERATING CURRENT: One device bank; Active-Precharge;
t
changing once per clock cyle; Address and control inputs
changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read
Precharge; Burst = 2;
0mA; Address and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
changing once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
(MIN); DQ, DM andDQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE £ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL
= 4) with auto precharge,
Address and control inputs change only during Active READ or
WRITE commands
RC =
CK =
a - Value calculated as one module rank in this operating condition, and all other module ranks in I
b - Value calculated reflects all module ranks in this operating condition.
t
t
t
RC (MIN);
CK MIN; CKE = HIGH; Address and other control inputs
CK =
t
CK (MIN); I
t
CK =
DD
t
CK =
Specifications and Conditions – 512MB Module
t
t
RC =
CK (MIN); DQ, DM, and DQS inputs
t
CK (MIN); DQ, DM and DQS inputs
OUT
t
t
RC =
t
RC (MIN);
= 0mA
CK =
t
t
RC =
t
CK =
IN
RC (MIN);
t
CK (MIN); CKE = LOW
= V
t
t
t
RAS (MAX);
REF
CK =
CK (MIN); CKE = (LOW)
for DQ, DQS, and DM
t
CK =
t
CK (MIN); I
t
t
RC =
RC = 7.8125µs
t
CK (MIN);
t
CK =
t
RC (MIN)
OUT
t
CK
=
15
A
£ +70°C; V
I
I
I
I
I
I
DD5A6
I
DD4W
SYM
DD3N
I
I
I
I
DD2P
DD2F
DD3P
DD4R
I
DD0
DD1
DD5
DD6
DD7
a
a
b
b
a
b
b
b
a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b
a
b
128MB, 256MB, 512MB (x64)
2,320
1,640
DD
-335
540
660
360
280
360
680
640
40
80
40
= V
DD
2,320
1,620
-262
540
660
360
280
360
680
640
200-PIN DDR SODIMM
Q = +2.5V ±0.2V
40
80
40
MAX
-26A/
2,240
1,420
-265
480
600
320
240
320
600
560
40
80
40
©2003 Micron Technology, Inc. All rights reserved.
2,240
1,420
-202
480
600
320
240
320
600
560
40
80
40
DD
2p (CKE LOW) mode.
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28, 46
21, 28, 46
NOTES
20, 44
20, 44
20, 43
20, 44
20, 46
24, 46
20, 45
47
20
9