MT8VDDT6464HD Micron Semiconductor Products, MT8VDDT6464HD Datasheet - Page 17

• Manufacturer Part Number: MT8VDDT6464HD
• Description: (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
• Manufacturer: Micron Semiconductor Products

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Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 50; notes appear on pages 20–23; 0°C £ T
09005aef806e1d28
DD8C16_32_64x64HDG_B.fm - Rev. B 7/03 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command
delay
Data valid output window
REFRESH to REFRESH command interval 128MB
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-335, -262) (Continued)
DD
256MB/ 512MB
128MB
256MB/ 512MB
SYMBOL
t
t
WPRES
t
t
t
17
t
t
t
t
WPRE
WPST
t
t
t
t
XSNR
XSRD
RPRE
RPST
t
WTR
REFC
RCD
RRD
REFI
VTD
t
WR
na
RP
A
£ +70°C; V
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.25
200
t
0.9
0.4
0.4
128MB, 256MB, 512MB (x64)
18
18
12
15
75
QH -
0
1
0
-335
DD
t
, V
DQSQ
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
DD
Q = +2.5V ±0.2V
200-PIN DDR SODIMM
MIN
0.25
200
0.9
0.4
0.4
20
20
15
15
75
0
1
t
0
0
QH -
-262
t
DQSQ
©2003 Micron Technology, Inc. All rights reserved.
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
NOTES
18, 19
38
17
22
21
21
21
21