2SD2216 Panasonic Semiconductor, 2SD2216 Datasheet

no-image

2SD2216

Manufacturer Part Number
2SD2216
Description
Silicon NPN epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2216-Q(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2216-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD2216-R
Quantity:
2 557
Part Number:
2SD2216GOL
Manufacturer:
PANASONIC
Quantity:
37 000
Part Number:
2SD2216J-(TX)
Manufacturer:
SIEMENS
Quantity:
400
Part Number:
2SD2216J-(TX)
Manufacturer:
PANA
Quantity:
2 016
Part Number:
2SD2216J-(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2216J-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2216J0L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2216JRL
Manufacturer:
Panasonic
Quantity:
56 000
Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1462
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
FE1
Features
High foward current transfer ratio h
Low collector to emitter saturation voltage V
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
160 ~ 260
Symbol
YQ
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
h
V
f
C
CBO
CEO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
ob
*
(Ta=25˚C)
FE
210 ~ 340
–55 ~ +125
.
YR
Ratings
R
200
100
125
125
60
50
7
V
V
I
I
I
V
V
I
V
V
CE(sat)
C
C
E
C
CB
CE
CE
CE
CB
CB
= 10 A, I
= 100 A, I
= 10 A, I
= 100mA, I
= 10V, I
= 10V, I
= 2V, I
290 ~ 460
= 20V, I
= 10V, I
= 10V, I
.
YS
S
C
Unit
mW
C
mA
mA
Conditions
E
B
C
˚C
˚C
E
E
E
V
V
V
= 100mA
B
= 0
= 0
B
= 0
= 0
= 2mA
= –2mA, f = 200MHz
= 0, f = 1MHz
= 0
= 10mA
Marking symbol :
1:Base
2:Emitter
3:Collector
min
160
60
50
90
7
1
2
EIAJ:SC–75
SS–Mini Type Package
0.4
150
Y
typ
0.1
3.5
1.6 0.15
0.8 0.1
0.2 0.1
max
100
460
0.1
0.3
0.4
3
Unit: mm
MHz
Unit
pF
V
V
V
V
A
A
1

Related parts for 2SD2216

2SD2216 Summary of contents

Page 1

... Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Features High foward current transfer ratio h Low collector to emitter saturation voltage V SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. Absolute Maximum Ratings Parameter ...

Page 2

... A ) Base current — 300 V =10V CB Ta=25˚C 240 180 120 60 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 ( mA ) Emitter current I E 2SD2216 I — 1200 V =10V CE Ta=25˚C 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Base to emitter voltage — I CE(sat) ...

Related keywords