2SB1462 Panasonic Semiconductor, 2SB1462 Datasheet

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2SB1462

Manufacturer Part Number
2SB1462
Description
Silicon PNP epitaxial planer type
Manufacturer
Panasonic Semiconductor
Datasheet

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Transistor
2SB1462
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD2216
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
FE
Features
High foward current transfer ratio h
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Marking Symbol
Parameter
Rank
h
Parameter
FE
160 ~ 260
Symbol
V
V
V
I
I
P
T
T
AQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
V
f
C
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
ob
*
(Ta=25˚C)
FE
210 ~ 340
–55 ~ +125
.
AR
Ratings
R
–200
–100
–60
–50
125
125
–7
V
V
I
I
I
V
I
V
V
C
C
E
C
CB
CE
CE
CB
CB
= –10 A, I
= –100 A, I
= –10 A, I
= –100mA, I
= –10V, I
= –10V, I
290 ~ 460
= –20V, I
= –10V, I
= –10V, I
AS
S
Unit
mW
mA
mA
Conditions
˚C
˚C
V
V
V
C
E
B
C
E
E
E
B
= 0
= 0
B
= 0
= 1mA, f = 200MHz
= 0, f = 1MHz
= 0
= –2mA
= 0
= –10mA
Marking symbol :
1:Base
2:Emitter
3:Collector
min
–60
–50
160
–7
1
2
EIAJ:SC–75
SS-Mini Type Package
0.4
– 0.11
A
typ
2.7
80
1.6 0.15
0.8 0.1
0.2 0.1
– 0.1
–100
– 0.3
max
460
0.4
3
Unit: mm
MHz
Unit
pF
V
V
V
V
A
A
1

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2SB1462 Summary of contents

Page 1

... Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 Features High foward current transfer ratio h SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. Absolute Maximum Ratings Parameter ...

Page 2

... Base to emitter voltage — 160 V =–10V CB Ta=25˚C 140 120 100 0.1 0 100 ( mA ) Emitter current I E 2SB1462 I — –60 V =–5V CE Ta=25˚C –50 –40 –30 –20 – –150 –300 –450 ( A ) Base current — I CE(sat) C –10 I ...

Page 3

... Collector to emitter voltage — =– =50k g 18 Ta=25˚ f=100Hz 10 1kHz 8 10kHz 0.1 0 Emitter current I E 2SB1462 h Parameter — 300 h fe 100 =–5V CE f=270Hz Ta=25˚C – 0.1 0 ...

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