2SB1553 Panasonic Semiconductor, 2SB1553 Datasheet - Page 2

• Manufacturer Part Number: 2SB1553
• Description: Silicon PNP epitaxial planar type(For power amplification)
• Manufacturer: Panasonic Semiconductor

Power Transistors
2
–100
– 0.3
– 0.1
– 0.03
– 0.01
1000
–30
–10
300
100
20
15
10
–3
–1
30
10
– 0.01
5
0
3
1
Collector to base voltage V
–1
0
Ambient temperature Ta ( ˚C )
20
– 0.03
Collector current I
–3
40
V
(2)
– 0.1
C
CE(sat)
P
ob
60
C
— V
– 0.3
(1) T
(2) Without heat sink
— Ta
–10
80
(P
(1)
— I
T
C
C
100
C
=Ta
=100˚C
CB
=2.0W)
–1
C
–30
C
120
I
f=1MHz
T
E
I
( A )
–3
C
C
=0
25˚C
CB
140
=25˚C
/I
–25˚C
B
=40
–100
( V )
160
–10
10000
3000
1000
0.03
0.01
300
100
100
0.3
0.1
–6
–5
–4
–3
–2
–1
30
10
30
10
Collector to emitter voltage V
– 0.01
0
3
1
0
0
T
– 0.03
Collector current I
Collector current I
C
–2
=100˚C
t
t
on
–2
–25˚C
on
– 0.1
I
, t
–4
h
C
FE
stg
— V
– 0.3
, t
t
— I
I
f
B
–6
–4
=–100mA
25˚C
f
–80mA
–60mA
— I
t
CE
–40mA
stg
Pulsed t
Duty cycle=1%
I
(–I
V
T
C
C
C
CC
/I
B1
=25˚C
–8
–1
–20mA
B
=–50V
=40
=I
C
C
C
–6
V
B2
–10mA
CE
T
w
)
–10
( A )
( A )
–3
=1ms
C
=–4V
=25˚C
–5mA
–2mA
CE
–12
–10
–8
( V )
1000
– 0.3
– 0.1
– 0.03
– 0.01
300
100
–10
–6
–5
–4
–3
–2
–1
30
10
–3
–1
Area of safe operation (ASO)
Collector to emitter voltage V
– 0.01
0
3
1
0.1
0
Base to emitter voltage V
I
I
CP
C
– 0.03
T
Collector current I
0.3
– 0.4
C
=125˚C
DC
t=10ms
– 0.1
I
C
1
f
– 0.8
T
— V
— I
– 0.3
–25˚C
3
–1.2
BE
C
2SB1553
25˚C
–1
10
C
V
f=10MHz
T
Non
repetitive
pulse
T
1ms
V
CE
C
–1.6
C
=25˚C
CE
=25˚C
( A )
BE
–3
30
=–12V
=–4V
CE
( V )
–2.0
–10
100
( V )