2SB779 Panasonic Semiconductor, 2SB779 Datasheet
2SB779
Manufacturer Part Number
2SB779
Description
Silicon PNP epitaxial planer type(For low-frequency output amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB779.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB779-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SB779-R(TX)
Manufacturer:
PHI
Quantity:
51
Part Number:
2SB779-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SB779R
Manufacturer:
Panasonic
Quantity:
51 000
Transistor
2SB779
Silicon PNP epitaxial planer type
For low-frequency output amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
FE1
Features
Low collector to emitter saturation voltage V
Satisfactory linearity of h
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
90 ~ 155
Symbol
FE
1AQ
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
at the low collector voltage.
I
I
V
V
V
h
h
V
V
f
C
CBO
CEO
T
FE1
FE2
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
*1
(Ta=25˚C)
130 ~ 220
–55 ~ +150
1AR
Ratings
R
– 0.5
–25
–20
200
150
–7
–1
V
V
I
I
I
V
V
I
I
V
V
CE(sat)
C
C
E
C
C
CB
CB
CE
CE
CE
CB
= –10 A, I
= –1mA, I
= –10 A, I
= –500mA, I
= –500mA, I
= –10V, I
= –20V, I
= –2V, I
= –2V, I
= –25V, I
= –10V, I
.
Unit
mW
Conditions
C
C
˚C
˚C
B
V
V
V
A
A
C
E
E
B
E
E
= –0.5A
= –1A
= 0
= 50mA, f = 200MHz
= 0
= 0
B
B
= 0
= 0, f = 1MHz
= 0
= –50mA
= –50mA
*2
*2
*2
*2
Marking symbol
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
–25
–20
–7
90
25
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
: 1A
– 0.2
150
typ
2.8
1.5
15
+0.2
–0.3
+0.25
–0.05
*2
Pulse measurement
–100
– 0.4
max
–1.2
220
–1
3
0.65 0.15
Unit: mm
MHz
Unit
nA
pF
V
V
V
V
V
A
1
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2SB779 Summary of contents
Page 1
... Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Features Low collector to emitter saturation voltage V Satisfactory linearity the low collector voltage. FE Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... T E 400 V =–10V CB Ta=25˚C 360 320 280 240 200 160 120 0.1 0 100 ( mA ) Emitter current I E 2SB779 V — I BE(sat) C –100 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 – ...