ISL83699 Intersil Corporation, ISL83699 Datasheet - Page 8

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ISL83699

Manufacturer Part Number
ISL83699
Description
Ultra Low ON-Resistance/ Low Voltage/ Single Supply/ Quad SPDT (Dual DPDT) Analog Switch
Manufacturer
Intersil Corporation
Datasheet

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Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND. One of
these diodes conducts if any analog signal exceeds V+ or
GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
Typical Performance Curves
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
0.45
0.35
0.25
0.45
0.35
0.25
0.5
0.4
0.3
0.2
0.4
0.3
0.2
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE
0
0
V+ = 3V
SWITCH VOLTAGE
V+ = 1.8V
0.5
V+ = 2.7V
1
85°C
V
V
COM
8
COM
1
2
(V)
(V)
-40°C
V+ = 3.6V
T
A
= 25°C, Unless Otherwise Specified
1.5
25°C
3
I
COM
I
COM
V+ = 1.8V
= 100mA
= 100mA
2
ISL83699
4
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
-100
-150
0.35
0.25
0.15
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
-50
0.3
0.2
50
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
0
0
0
V+ = 1.8V
0.5
0.5
1
1
85°C
25°C
-40°C
V
V
COM
COM
1.5
1.5
(V)
(V)
V+ = 3V
2
2
I
COM
November 5, 2004
2.5
2.5
V+ = 2.7V
= 100mA
FN6094.3
3
3

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