FTP18N06

Manufacturer Part NumberFTP18N06
DescriptionN-Channel MOSFET
ManufacturerIPS
FTP18N06 datasheet
 
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N-Channel MOSFET
Applications:
• DC Motor Control
• UPS
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
PACKAGE
FTP18N06
TO-220
Absolute Maximum Ratings
Symbol
V
Drain-to-Source Voltage
DSS
I
Continuous Drain Current
D
o
I
@ 100
C
Continuous Drain Current
D
I
Pulsed Drain Current, V
DM
Power Dissipation
P
D
Derating Factor above 25
V
Gate-to-Source Voltage
GS
Single Pulse Avalanche Engergy
E
AS
L=500 µH, I
I
Pulsed Avalanche Engergy
AS
dv/dt
Peak Diode Recovery dv/dt
Maximum Temperature for Soldering
T
Leads at 0.063in (1.6mm) from Case for 10 seconds
L
T
Package Body for 10 seconds
PKG
Operating Junction and Storage
T
and T
J
STG
Temperature Range
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
R
Junction-to-Case
θJC
Junction-to-Ambient
R
θJA
©
2006 InPower Semiconductor Co., Ltd.
BRAND
FTP18N06
T c = 25
o
C unless otherwise specified
Parameter
(NOTE *1)
@ 10V
(NOTE *2)
GS
o
C
=21.5A
D
(NOTE *3)
Min.
Typ.
Max.
--
--
1.0
--
--
62
FTP18N06
Lead Free Package and Finish
Pb
V
R
(Max.)
DSS
DS(ON)
60V
18 mΩ
G
G
D
S
TO-220
Not to Scale
Maximum
60
59
.
Figure 3
Figure 6
150
1.0
±20
115
Figure 8
3.0
300
260
-55 to 175
Units
Test Conditions
Water cooled heatsink, P
a peak junction temperature of +175
o
C /W
1 cubic foot chamber, free air
FTP18N06 REV. B Oct. 2006
I
D
59A
D
S
Units
V
A
W
o
W/
C
V
mJ
V/ns
o
C
adjusted for
D
o
C

FTP18N06 Summary of contents

  • Page 1

    ... Figure 3 Figure 6 150 1.0 ±20 115 Figure 8 3.0 300 260 -55 to 175 Units Test Conditions Water cooled heatsink peak junction temperature of +175 cubic foot chamber, free air FTP18N06 REV. B Oct. 2006 I D 59A D S Units V/ adjusted for ...

  • Page 2

    ... mΩ Max. Units -- -- 59.6 12.6 nC 13.8 Max. Units 9 FTP18N06 REV. B Oct. 2006 Page =0V, I =250µ =250µA D =60V =48V =150 =+20V -20V GS Test Conditions =10V, I =36A GS ...

  • Page 3

    ... C unless otherwise specified J Min. Typ < =+175 C DD DSS J Max. Units Test Conditions 59 A Integral pn-diode in MOSFET 236 A I =59A =59A, di/dt=100 A/µs 135 nC F FTP18N06 REV. B Oct. 2006 Page =0V ...

  • Page 4

    ... I = 14A 28A PULSE DURATION = 250 µS 25 DUTY FACTOR = 0.5% MAX Gate-to-Source Voltage ( FTP18N06 REV. B Oct. 2006 Page θJC 1E+01 150 175 ...

  • Page 5

    ... Time in Avalanche (s) AV Typical Drain-to-Source ON Resistance vs Junction Temperature PULSE DURATION = 250 µs DUTY FACTOR = 0.5% MAX V = 10V 15A GS D -75 -50 - 100 125 150 T , Junction Temperature ( J FTP18N06 REV. B Oct. 2006 Page 150 T C – ---------------------- 125 10E+0 -V )+1] DSS ...

  • Page 6

    ... C oss ≅ rss = 0.01 0 Drain Voltage (V) DS Figure 16. Typical Body Diode Transfer Characteristics 180 160 140 120 100 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) SD FTP18N06 REV. B Oct. 2006 Page 100 125 150 175 iss C oss C rss 10 100 1.1 1.3 ...

  • Page 7

    ... Figure 19. Resistive Switching Test Circuit © 2006 InPower Semiconductor Co., Ltd D.U.T. V GS(TH D.U. Miller Region Figure 18. Gate Charge Waveform 90% 10 d(ON) rise d(OFF Figure 20. Resistive Switching Waveforms FTP18N06 REV. B Oct. 2006 Page fall ...

  • Page 8

    ... InPower Semiconductor Co., Ltd. Current Pump Series Switch (MOSFET Commutating Diode Figure 24. Unclamped Inductive Switching Waveforms di/dt = 100A Figure 22. Diode Reverse Recovery Waveform FTP18N06 REV. B Oct. 2006 Page µ DSS t AV ...

  • Page 9

    ... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. © 2006 InPower Semiconductor Co., Ltd. FTP18N06 REV. B Oct. 2006 Page ...