2SC3130 Panasonic Semiconductor, 2SC3130 Datasheet
2SC3130
Manufacturer Part Number
2SC3130
Description
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC3130.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC3130Q
Manufacturer:
PANASONIC
Quantity:
21 000
www.DataSheet4U.com
Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
FE
Marking Symbol
Features
High transition frequency f
Small collector output capacitance C
transfer capacitance C
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
ratio
Parameter
Rank
h
FE
Parameter
75 ~ 130
1SP
rb
P
.
Symbol
V
V
V
I
P
T
T
C
T
C
j
stg
CBO
CEO
EBO
.
I
V
V
h
V
f
C
r
C
110 ~ 220
CBO
T
bb
FE
(Ta=25˚C)
Symbol
h
CEO
EBO
CE(sat)
ob
rb
' · C
FE
1SQ
*
Q
(Ta=25˚C)
ob
C
–55 ~ +150
and common base reverse
Ratings
150
150
15
10
50
3
200 ~ 400
V
I
I
V
I
V
V
V
V
V
V
C
E
C
CB
CE
CB
CB
CB
CB
CE
CE
1SR
= 2mA, I
= 10 A, I
= 20mA, I
R
= 4V, I
= 4V, I
= 4V, I
= 10V, I
= 4V, I
= 4V, I
= 4V, I
= 4V, I
C
C
C
E
E
E
E
B
Unit
mW
C
mA
Conditions
˚C
˚C
E
B
V
V
V
= 5mA
= –5mA, f = 200MHz
= 0, f = 1MHz
= –5mA, f = 31.9MHz
= 0, f = 1MHz
= 100 A
= 5mA
= 0
= 0
= 0
= 4mA
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
0.75
min
1.4
10
75
3
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
0.45
200
1S
typ
1.9
1.4
2.8
1.5
11
+0.2
–0.3
+0.25
–0.05
max
400
0.5
2.5
1.6
3
1
0.65 0.15
Unit: mm
GHz
Unit
pF
pF
ps
V
V
V
A
1
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2SC3130 Summary of contents
Page 1
... Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Features High transition frequency f Small collector output capacitance C transfer capacitance Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings ...
Page 2
... A B 400 A 30 300 A 20 200 A 100 0.4 0 Base to emitter voltage — 4.0 V =4V CE 3.5 3.0 2.5 2.0 1.5 1.0 0 100 – 0.1 – 0.3 – Emitter current I C 2SC3130 BE V =4V CE 25˚C –25˚C 1.2 1.6 2 =4V CB Ta=25˚C –3 –10 –30 –100 ( ...