BUPD1520 Power Innovations Limited, BUPD1520 Datasheet

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BUPD1520

Manufacturer Part Number
BUPD1520
Description
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Manufacturer
Power Innovations Limited
Datasheet
Copyright © 1999, Power Innovations Limited, UK
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Collector-emitter voltage (I
Collector-emitter voltage (V
Emitter-base voltage (I
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
G
G
G
Designed for Self Oscillating Inverter
Applications
Rugged 1500 V Planar Construction
Integral Free-Wheeling Anti-Parallel Diode
1: This value applies for t
C
= 0)
B
I N F O R M A T I O N
BE
= 0)
= 0)
p
10 ms, duty cycle
RATING
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2%.
device symbol
B
C
E
Pin 2 is in electrical contact with the mounting base.
B
TO-220 PACKAGE
MAY 1999 - REVISED SEPTEMBER 1999
(TOP VIEW)
SYMBOL
V
V
V
T
I
P
I
CEO
CES
EBO
CM
T
I
I
BM
T
stg
C
B
tot
L
C
E
j
2
3
1
-55 to +125
-55 to +150
VALUE
1500
700
300
2.5
2.5
11
50
2
2
BUPD1520
MDTRACA
UNIT
°C
°C
°C
W
V
V
V
A
A
A
A
1

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BUPD1520 Summary of contents

Page 1

... Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Pin electrical contact with the mounting base. device symbol RATING 2%. BUPD1520 MAY 1999 - REVISED SEPTEMBER 1999 TO-220 PACKAGE (TOP VIEW MDTRACA C B ...

Page 2

... BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter V I CEO C voltage Collector-base V I CBO C voltage Emitter-base V I EBO EB voltage Collector cut-off I V CEO CE current Collector-emitter I V CES CE cut-off current ...

Page 3

... I - Collector Current - A C Figure 1. MAXIMUM SAFE OPERATING REGIONS R3636CFB 25° 100 1000 0 BUPD1520 MAY 1999 - REVISED SEPTEMBER 1999 R3636CHF T = 125° 25° 0° MAXIMUM REVERSE-BIAS SAFE OPERATING AREA B(on ...

Page 4

... BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions ...

Page 5

... PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IMPORTANT NOTICE Copyright © 1999, Power Innovations Limited BUPD1520 MAY 1999 - REVISED SEPTEMBER 1999 5 ...

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