BULD85KC Power Innovations Limited, BULD85KC Datasheet

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BULD85KC

Manufacturer Part Number
BULD85KC
Description
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Manufacturer
Power Innovations Limited
Datasheet
Copyright © 1997, Power Innovations Limited, UK
description
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Collector-emitter voltage (V
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching
storage times and an integrated fast t
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
Designed Specifically for High Frequency
Electronic Ballasts
Integrated Fast t
Enhancing Reliability
Diode t
Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and
Diode
Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
1: This value applies for t
rr
Typically 1 µs
transistors
E
= 0)
B
I N F O R M A T I O N
BE
= 0)
rr
= 0)
Anti-Parallel Diode,
p
has
10 ms, duty cycle
tightly
RATING
controlled
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2%.
rr
anti-
device symbol
B
C
E
Pin 2 is in electrical contact with the mounting base.
B
TO-220 PACKAGE
MAY 1994 - REVISED SEPTEMBER 1997
(TOP VIEW)
SYMBOL
V
V
V
V
I
T
I
P
E(av)
I
CES
CBO
CEO
EBO
CM
BM
I
I
T
stg
C
B
tot
C
E
j
1
2
3
-65 to +150
-65 to +150
VALUE
600
600
400
0.5
70
9
6
8
2
4
BULD85KC
MDTRACA
UNIT
°C
°C
W
V
V
V
V
A
A
A
A
A
1

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BULD85KC Summary of contents

Page 1

... NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Pin electrical contact with the mounting base. device symbol tightly controlled anti- rr RATING 2%. BULD85KC MAY 1994 - REVISED SEPTEMBER 1997 TO-220 PACKAGE (TOP VIEW MDTRACA SYMBOL VALUE ...

Page 2

... BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1994 - REVISED SEPTEMBER 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter V I CEO(sus) C sustaining voltage Collector-emitter I V CES CE cut-off current Emitter cut-off I V EBO EB current Base-emitter BE(sat) B saturation voltage Collector-emitter ...

Page 3

... BASE-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE 1.0 0.9 0.8 0.7 0.6 -50 - Case Temperature - °C C Figure 3. MAY 1994 - REVISED SEPTEMBER 1997 ANTI-PARALLEL DIODE 25°C C 0·5 1·0 1·5 2· Instantaneous Forward Voltage - V EC Figure 2. LDX85CVB 0 100 125 150 BULD85KC LDX85CVF 2·5 3 ...

Page 4

... BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1994 - REVISED SEPTEMBER 1997 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 1·0 0· 100 µ Operation 0·01 1· Collector-Emitter Voltage - V CE Figure 4. 1·0 60% 40% 20% 10% 0·1 0% 0·01 0· ...

Page 5

... Read time at end of t1, T – max - Power Pulse Duration - s Figure 7. vs POWER PULSE DURATION - Power Pulse Duration - s Figure 8. BULD85KC MAY 1994 - REVISED SEPTEMBER 1997 LDX85CZC T = 25° peak R JC max ...

Page 6

... BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1994 - REVISED SEPTEMBER 1997 MAXIMUM POWER DISSIPATION JUNCTION TO CASE 1000 0% 10% 20% 40% 60% 100 THERMAL INFORMATION vs POWER PULSE DURATION - Power Pulse Duration - s Figure 9 ...

Page 7

... C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MECHANICAL DATA 2,95 2,54 6,6 6,0 15,90 14,55 6,1 3,5 14,1 12,7 1,70 1,07 3 2,74 2,34 5,28 4,88 ALL LINEAR DIMENSIONS IN MILLIMETERS BULD85KC MAY 1994 - REVISED SEPTEMBER 1997 4,70 4,20 1,32 1,23 0,64 0,41 2,90 2,40 VERSION 2 MDXXBE 7 ...

Page 8

... BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1994 - REVISED SEPTEMBER 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. ...

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