BULD50KC Power Innovations Limited, BULD50KC Datasheet

BULD50KC

Manufacturer Part Number

BULD50KC

Description

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Manufacturer

Power Innovations Limited

Datasheet

1.BULD50KC.pdf (10 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BULD50KC

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1 317

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description

absolute maximum ratings at 25°C (unless otherwise noted)

NOTES: 1. This value applies for t

P R O D U C T

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

Collector-emitter voltage (V

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 2)

Continuous base current

Peak base current (see Note 2)

25°C case temperature for BULD50KC, and

The new BULDxx range of transistors have been

designed specifically for use in High Frequency

Electronic Ballasts (HFEB’s). This range of

switching

storage times and an integrated fast t

parallel diode. The revolutionary design ensures

that the diode has both fast forward and reverse

recovery times, achieving the same performance

as a discrete anti-parallel diode plus transistor.

The integrated diode has minimal charge

coupling with the transistor, increasing frequency

stability, especially in lower power circuits where

the circulating currents are low. By design, this

new device offers a voltage matched integrated

transistor and anti-parallel diode.

Designed Specifically for High Frequency

Electronic Ballasts

Integrated Fast t

Enhancing Reliability

Diode t

New Low-Height SL Power Package,

TO220 Pin-Compatible

Tightly Controlled Transistor Storage Times

Voltage Matched Integrated Transistor and

Diode

Characteristics Optimised for Cool Running

Diode-Transistor Charge Coupling

Minimised to Enhance Frequency Stability

2. This value applies for t

Typically 1 µs

transistors

= 0)

I N F O R M A T I O N

= 0)

Anti-Parallel Diode,

has

1 s.

10 ms, duty cycle

tightly

RATING

25°C ambient temperature for BULD50SL

controlled

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

2%.

anti-

BULD50KC

BULD50SL (see Note 1)

BULD50KC

BULD50SL (see Note 1)

device symbol

Pin 2 is in electrical contact with the mounting base.

FEBRUARY 1994 - REVISED SEPTEMBER 1997

TO-220 PACKAGE

(TOP VIEW)

SL PACKAGE

SYMBOL

(TOP VIEW)

BULD50KC, BULD50SL

CES

CBO

CEO

EBO

VALUE

600

400

3.5

1.5

2.5

MDTRACA

UNIT

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