BD745 Power Innovations Limited, BD745 Datasheet

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BD745

Manufacturer Part Number
BD745
Description
NPN SILICON POWER TRANSISTORS
Manufacturer
Power Innovations Limited
Datasheet

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Copyright © 1997, Power Innovations Limited, UK
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Designed for Complementary Use with the
BD746 Series
115 W at 25°C Case Temperature
20 A Continuous Collector Current
25 A Peak Collector Current
Customer-Specified Selections Available
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
E
S
= 0)
B
= 0.1 , V
I N F O R M A T I O N
= 0)
p
CC
0.3 ms, duty cycle
= 20 V.
RATING
10%.
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
BD745
BD745A
BD745B
BD745C
BD745
BD745A
BD745B
BD745C
BD745, BD745A, BD745B, BD745C
SOT-93 PACKAGE
AUGUST 1978 - REVISED MARCH 1997
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
CBO
CEO
EBO
CM
T
T
I
I
1
2
3
T
stg
C
B
tot
tot
A
L
j
C
B(on)
2
= 0.4 A, R
-65 to +150
-65 to +150
-65 to +150
VALUE
110
100
115
260
3.5
50
70
90
45
60
80
20
25
90
5
7
BE
= 100 ,
MDTRAA
UNIT
mJ
°C
°C
°C
°C
W
W
V
V
V
A
A
A
1

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BD745 Summary of contents

Page 1

... Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters RATING 10 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE (TOP VIEW Pin electrical contact with the mounting base. ...

Page 2

... BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector cut-off CBO current ...

Page 3

... MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 1·0 0·1 BD745 BD745A BD745B BD745C 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 3. BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 vs COLLECTOR CURRENT 300µs, duty cycle < 1· ...

Page 4

... BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 120 100 100 T - Case Temperature - °C C Figure 4. TIS635AB ...

Page 5

... NOTE A: The centre pin is in electrical contact with the mounting tab NPN SILICON POWER TRANSISTORS MECHANICAL DATA 16,2 MAX. 31,0 TYP. 18,0 TYP. 3 ALL LINEAR DIMENSIONS IN MILLIMETERS BD745, BD745A, BD745B, BD745C AUGUST 1978 - REVISED MARCH 1997 4,90 4,70 1,37 3,95 1,17 4,15 2,50 TYP. 0,78 ...

Page 6

... BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...

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