MMBT4124-NL Fairchild Semiconductor, MMBT4124-NL Datasheet

MMBT4124-NL

Manufacturer Part Number

MMBT4124-NL

Description

2n4124/mmbt4124 Npn General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBT4124-NL.pdf (7 pages)

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2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Thermal Characteristics

NPN General Purpose Amplifier

Absolute Maximum Ratings*

, T

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to

100 MHz as an amplifier.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

2N4124

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

MMBT4124

SOT-23

Mark: ZC

2N4124

83.3

625

200

5.0

Max

-55 to +150

Value

*MMBT4124

200

5.0

350

357

2.8

2N4124/MMBT4124, Rev A

Units

mW/ C

Units

C/W

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MMBT4124-NL Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation MMBT4124 C TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4124 625 5.0 83.3 200 E B Value Units 5.0 V 200 mA -55 to +150 C Max Units *MMBT4124 350 mW 2.8 mW/ C C/W 357 C/W 2N4124/MMBT4124, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...

Page 6

Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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