MMBT4401-NL Fairchild Semiconductor, MMBT4401-NL Datasheet

MMBT4401-NL

Manufacturer Part Number

MMBT4401-NL

Description

2n4401/mmbt4401 Npn General Pupose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBT4401-NL.pdf (7 pages)

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2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Absolute Maximum Ratings*

NPN General Pupose Amplifier

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

This device is designed for use as a medium power amplifier and

switch requiring collector currents up to 500 mA.

, T

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

2N4401

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

MMBT4401

SOT-23

Mark: 2X

2N4401

83.3

625

200

5.0

Max

-55 to +150

Value

*MMBT4401

6.0

600

350

357

2.8

2N4401/MMBT4401, Rev A

Units

mW/ C

Units

C/W

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MMBT4401-NL Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation MMBT4401 C SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4401 625 5.0 83.3 200 E B Value Units 6.0 V 600 mA -55 to +150 C Max Units *MMBT4401 350 mW 2.8 mW/ C C/W 357 C/W 2N4401/MMBT4401, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 320 240 160 100 I - COLLECTOR CURRENT (mA) ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics COLLECTOR CURRENT ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Timer NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time NPN General Purpose Amplifier 1.0 K 500 - 1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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