BUP307 Infineon Technologies Corporation, BUP307 Datasheet - Page 6

• Manufacturer Part Number: BUP307
• Description: Igbt
• Manufacturer: Infineon Technologies Corporation

Typ. gate charge
V
parameter: I
Typ. switching time t = f ( R
inductive load, with freewheel diode BYP 102
parameter: T
Semiconductor Group
V
GE
GE
= ( Q
20
16
14
12
10
V
8
6
4
2
0
0
Gate
20
C puls
j
= 125 °C, V
)
40
= 20 A
60
80
CE
400 V
G
100 120 140
= 600 V, V
)
GE
Q
800 V
nC
Gate
= ± 15 V, I
180
6
Typ. capacitances
C = f (V
parameter: V
C
= 10 A
CE
)
GE
= 0 V, f = 1 MHz
Dec-07-1995
BUP 307