2SK657

Manufacturer Part Number2SK657
DescriptionFor Switching
ManufacturerPanasonic Semiconductor
2SK657 datasheet
 


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Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source breakdown voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time
t
on
Turn-off time
t
off
*
t
, t
measurement circuit
on
off
V
out
200Ω
V
= 5V
GS
V
= 5V
DD
50Ω
(Ta = 25°C)
Ratings
Unit
50
V
DSS
8
V
GSO
±100
mA
±200
mA
400
mW
150
°C
−55 to +150
°C
Conditions
V
= 10V, V
= 0
DS
GS
V
= 8V, V
= 0
GS
DS
I
= 100µA, V
= 0
DSS
D
GS
I
= 100µA, V
= V
th
D
DS
GS
I
= 20mA, V
= 5V
D
GS
|
I
= 20mA, V
= 5V, f = 1kHz
fs
D
DS
V
= 5V, V
= 0, f = 1MHz
DS
GS
*
V
= 5V, V
= 0 to 5V, R
DD
GS
L
*
V
= 5V, V
= 5 to 0V, R
DD
GS
L
90%
10%
V
in
V
out
10%
90%
t
t
on
off
Note) The part number in the parenthesis shows conventional part number.
2.5
6.9
±0.1
(1.5)
(1.5)
R 0.9
R 0.7
(0.85)
0.55
±0.1
1
2
3
(2.5)
(2.5)
Internal Connection
G
min
typ
max
10
50
50
1.5
3.5
50
20
15
6
1.2
= 200Ω
10
= 200Ω
20
Unit: mm
±0.1
(1.0)
0.45
±0.05
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
D
S
Unit
µA
µA
V
V
mS
pF
pF
pF
ns
ns
1

2SK657 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET For switching I Features G High-speed switching G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. I Absolute Maximum Ratings Parameter Symbol Drain to Source breakdown voltage ...

  • Page 2

    Silicon MOS FETs (Small Signal)  0.7 0.6 0.5 0.4 0.3 0.2 0 100 120 140 160 Ambient temperature Ta ( ˚C )  iss ...

  • Page 3

    Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...