2SK1169 Hitachi Semiconductor, 2SK1169 Datasheet

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2SK1169

Manufacturer Part Number
2SK1169
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
2SK1169, 2SK1170
Silicon N-Channel MOS FET
TO-3P
G
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

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2SK1169 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO- Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...

Page 3

... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1169 I drain current 2SK1170 Gate to source cutoff voltage Static Drain to source 2SK1169 R on state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 4

... Power vs. Temperature Derating 150 100 Case Temperature T Typical Output Characteristics Drain to Source Voltage V 4 100 1.0 0.3 0.1 100 150 (° Pulse Test (V) DS Maximum Safe Operation Area Operation in this area ...

Page 5

... Pulse Test 2 1.0 0.5 0.2 0.1 0. (V) Forward Transfer Admittance Pulse Test 1.0 0.5 120 160 0.2 (°C) 2SK1169, 2SK1170 Resistance vs. Drain Current 100 Drain Current I (A) D vs. Drain Current = 20 V –25° 25°C C 75°C 0.5 1 ...

Page 6

... Body to Drain Diode Reverse Recovery Time 5,000 di/dt = 100 25° 2,000 GS Pulse Test 1,000 500 200 100 50 0.5 1.0 2 Reverse Drain Current I Dynamic Input Characteristics 500 V = 100 V DD 250 V 400 400 V 300 200 V = 400 V 100 DD 250 V ...

Page 7

... V GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin R L Vout . (on) 2SK1169, 2SK1170 2 25°C C ch–c (t) = (t) · ch–c S ch–c = 1.04°C/W,T = 25° Wavewforms ...

Page 8

Max 0.9 3.6 1.0 5.45 0.5 4.8 0.2 1.0 0.2 0.6 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 1.5 2.8 0.2 TO-3P — Conforms 5.0 g Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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