2SK1302 Hitachi Semiconductor, 2SK1302 Datasheet
2SK1302
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2SK1302 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1302 TO-220AB Gate 2. Drain (Flange) 3 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V (BR)DSS ...
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... V — 1.3 — — 300 — rr 2SK1302 Unit Test conditions mA 100 ...
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... Power vs. Temperature Derating Case Temperature T Typical Output Characteristics 3 2 Drain to Source Voltage V 4 100 0.3 0.1 100 150 (°C) C Pulse Test (V) DS Maximum Safe Operation Area Ta = 25° ...
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... 0.5 0.2 120 160 (°C) C 2SK1302 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 100 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current –25° 25°C C 75° ...
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... Body to Drain Diode Reverse Recovery Time 1000 500 200 100 50 di/ 25° Pulse Test 10 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 100 Gate Charge Qg (nc) ...
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... GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin R L Vout . (on) 2SK1302 2 25°C C ch–c ( (t) · ch–c ch–c = 2.50°C/ 25° Wavewforms ...
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MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...