2SK1315 Hitachi Semiconductor, 2SK1315 Datasheet - Page 3

• Manufacturer Part Number: 2SK1315
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static Drain to source 2SK1315 R
on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
See characteristic curves of 2SK1159, 2SK1160.
1. Pulse test
2SK1315 V
2SK1316
2SK1315 I
2SK1316
2SK1316
Symbol Min
V
I
V
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
450
500
—
—
2.0
—
—
4.5
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
0.55
0.60
7.5
1150
340
55
17
55
100
45
0.9
350
Max
—
—
250
3.0
0.7
0.8
—
—
—
—
—
—
—
—
—
—
2SK1315(L)(S), 2SK1316(L)(S)
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 8 A, V
= 8 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
/dt = 100 A/ s
= 7.5
= 360 V, V
= 400 V, V
= 10 V, V
= 25 V, V
GS
GS
GS
DS
GS
DS
= 0
= 0,
= 10 V *
= 10 V *
= 10 V,
GS
GS
DS
GS
GS
= 10 V
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3