2SK1336 Hitachi Semiconductor, 2SK1336 Datasheet
2SK1336
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2SK1336 Summary of contents
Page 1
... Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1336 TO- Source 2. Drain 3. Gate ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown ...
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... Drain to Source Voltage 0.3 0.1 0.03 0.01 0.005 0.1 150 1 Pulse Test 0.8 3 0.4 2 (V) Gate to Source Voltage V DS 2SK1336 Maximum Safe Operation Area 0 Drain to Source Voltage V (V) DS Typical Transfer Characteristics = 10 V 25°C = 75°C –25° (V) GS 100 5 3 ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 0.8 0.6 0.4 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test – Case Temperature T 4 Pulse Test 0 0 0.1 A 0.5 A 0.2 A 0.1 A 0.05 80 ...
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... MHz 0 Drain to Source Voltage V (A) DR 100 0.05 3.2 4.0 2SK1336 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss = (V) DS Switching Characteristics duty < 1 (off (on) ...
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... Reverse Drain Current vs. Source to Drain Voltage 1.0 Pulse Test 0.8 0 – 0.4 0.8 1.2 Source to Drain Voltage V SD 1.6 2.0 (V) ...
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Max 0.5 0.1 1.27 2.54 3.8 0.3 0.5 Hitachi Code TO-92 (1) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...