2SK2129 Panasonic Semiconductor, 2SK2129 Datasheet
2SK2129
Manufacturer Part Number
2SK2129
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2129.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2129
Manufacturer:
PANASONIC
Quantity:
10 000
Company:
Part Number:
2SK2129
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK2129
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power F-MOS FETs
2SK2129
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Avalanche energy capacity guaranteed: EAS > 20mJ
V
High-speed switching: t
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 4.5mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
GSS
= ±30V guaranteed
Parameter
Parameter
L
= 3A, V
DC
Pulse
T
Ta = 25°C
C
DD
= 25°C
= 50V, 1 pulse
f
= 50ns
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
GS
DD
55 to +150
Ratings
= 1mA, V
= 3A, V
= 640V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, I
800
±30
150
= 200V, R
±3
±6
20
50
2
GS
Conditions
GS
D
D
D
D
GS
= 1mA
= 2A
= 2A
= 0
= 2A
GS
DS
L
= 0
= 0, f = 1MHz
= 100
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
min
800
1.5
3.2±0.1
2
7
1
9.9±0.3
2 3
730
160
typ
3.2
2.4
90
40
35
60
50
5.08±0.4
1.45±0.15
2.54±0.2
0.75±0.1
1.2±0.15
max
0.1
2.5
±1
1.6
5
4
TO-220E Package
4.6±0.2
0.7±0.1
1: Gate
2: Drain
3: Source
2.9±0.2
2.6±0.1
unit: mm
°C/W
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
1
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2SK2129 Summary of contents
Page 1
... Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 20mJ V = ±30V guaranteed GSS High-speed switching 50ns f No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply ...
Page 2
... DS(on =10V =150˚ 100˚C 6 25˚C 4 0˚ Drain current I D 2SK2129 EAS =50V 100 125 150 175 ( ˚C ) Junction temperature ...
Page 3
... I =3A D 700 14 600 12 500 400 8 300 200 4 100 Gate charge amount Q g 2SK2129 d(on d(off) D 300 V =200V DD V =10V GS T =25˚C C 250 200 150 t d(off) 100 d(on ...