2SK2329 Hitachi Semiconductor, 2SK2329 Datasheet

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2SK2329

Manufacturer Part Number
2SK2329
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2329L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK2329S
Manufacturer:
SHINDENGEN
Quantity:
12 500
Part Number:
2SK2329STR
Manufacturer:
HITACHI/日立
Quantity:
20 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Suitable for Switching regulator, DC-DC converter
2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
DPAK-2
G
S
D
1
2 3
4
1
2
3
4
1. Gate
2. Drain
3. Source
4. Drain

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2SK2329 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK Gate G 2 ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...

Page 3

... V — 0.9 — — 100 — rr 2SK2329(L), 2SK2329(S) Unit Test Conditions mA 200 6 ...

Page 4

... Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 2 Drain to Source Voltage 4 100 0.5 0.2 0.1 150 200 0 1 (V) DS Maximum Safe Operation Area ...

Page 5

... A 0. 0.01 0.1 0 (V) GS Forward Transfer Admittance vs 0.5 0.1 0.3 120 160 Tc (°C) 2SK2329(L), 2SK2329(S) vs. Drain Current 100 Drain Current I (A) D Drain Current Tc = –25 °C 25 °C 75 ° Pulse Test 100 Drain Current I ...

Page 6

... Body to Drain Diode Reverse Recovery Time 1000 500 200 100 50 20 di/ 0.2 0 Reverse Drain Current Dynamic Input Characteristics 100 Gate Charge 6 5000 2000 1000 ...

Page 7

... Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ 2SK2329(L), 2SK2329(S) Reverse Drain Current vs. Souece to Drain Voltage Pulse Test – 0.4 0.8 1.2 1 – c( (t) • ch – 6.25 °C/ ° ...

Page 8

... Switching Time Test Circuit Vin Monitor D.U.T. Vin Vout Monitor R L 10% Vin V DD Vout = 10 V td(on) Waveform 90% 10% 10% 90% 90% td(off ...

Page 9

Hitachi Code DPAK (L)-(2) JEDEC — EIAJ — Weight (reference value) 0.42 g Unit: mm ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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