2SK2339 Panasonic Semiconductor, 2SK2339 Datasheet
2SK2339
Manufacturer Part Number
2SK2339
Description
Silicon N-Channel Power F-MOS
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2339.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2339
Manufacturer:
PANASONIC
Quantity:
12 500
Power F-MOS FETs
2 S K 2 3 3 9
Silicon N-Channel Power F-MOS
* L= 5mH, I
Avalanche energy capability guaranteed
Low ON-resistance
No secondary breakdown
Low-voltage drive
Non-contact relay
Solenoid drive
Motor drive
Control equipment
Switching mode regulator
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Features
Applications
Absolute Maximum Ratings (Tc = 25˚C)
Electrical Characteristics (Tc = 25˚C)
L
= 5A, 1 pulse
Parameter
Parameter
DC
Pulse
T
Ta= 25˚C
C
= 25˚C
I
I
V
V
R
R
| Y
V
t
Q
C
C
C
t
t
t
R
R
Symbol
Symbol
rr
on
f
d(off)
DSS
GSS
V
V
I
I
EAS
P
T
T
DS(on)
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
th
DSF
rr
D
DP
D
ch
stg
fs
DSS
GSS
|
*
1
2
–55 to +150
V
V
I
V
V
V
V
I
L=230µ H, V
I
V
V
V
D
DR
DR
DS
DS
DS
GS
GS
DS
DS
DD
GS
=1mA, V
Rating
80±10
=10A, V
=10A, di/dt= 80A/µ s
62.5
±15
±10
±20
150
= 70V, V
= 0, V
=10V, I
=10V, I
= 4V, I
=10V, I
=10V, V
=10V, R
1.3
= 30V, I
30
GS
D
GS
D
D
D
GS
= 5A
GS
L
=15V
D
Condition
=1mA
= 5A
= 5A
GS
DD
= 6
= 0
= 5A
= 0
= 0, f= 1MHz
= 0
= 30V, V
Unit
mJ
˚C
˚C
W
V
V
A
A
GS
= 0
Equivalent Circuit
Min
1
G
70
5.08 0.5
8.5 0.2
6.0 0.5
1
3
2
3
2.54 0.3
0.8 0.1
1.5max.
0.55
Typ
150
230
250
5.5
2.2
0.5
0.9
1.9
85
20
Max
±10
–1.8
230
370
2.5
4.2
10
90
96
D
S
3.4 0.3
2SK2339
N Type Package
1 : Gate
2 : Collector
3 : Emitter
0.5max.
Unit : mm
1.0 0.1
1.1max.
˚C/W
˚C/W
Unit
m
m
µ A
µ A
µ s
µ s
µ s
µ s
µ s
pF
pF
pF
V
V
V
S
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2SK2339 Summary of contents
Page 1
... L=230µ 30V =10A, di/dt= 80A/µ =10V 1MHz 30V =10V 2SK2339 Unit : mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 1.5max. 1.1max. 0.8 0.1 0.5max. 2.54 0.3 5.08 0 Gate 2 : Collector 3 : Emitter N Type Package Min Typ Max Unit 10 µ A ± ...
Page 2
... V ) Gate-Source voltage – V DS(on) GS 600 T =25˚C C 500 I =2. 400 300 200 100 Gate-Source voltage V GS 2SK2339 IAS – L-load 100 T =25˚ 62.5mJ 0.5 0.3 0.2 0.1 0.1 0.3 0 L-load L V – ...
Page 3
... Notes: R was measured at Ta=25˚C th and under natural convection. (1) without heat sink (2) with 2mm Al heat sink 100 10 1 0.1 10 –4 10 –3 10 –2 10 –1 1 Pulse width t 2SK2339 V V – =10A D Ta=20˚ =30V DS V =40V DS V ...