2SK2373 Hitachi Semiconductor, 2SK2373 Datasheet
2SK2373
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2SK2373 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline 2SK2373 MPAK Source G 2. Gate 3. Drain ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 100 s, duty cycle 2. Marking is “ZE–”. Electrical Characteristics (Ta = 25°C) ...
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... R 0.003 °C 1 shot pulse 0.001 200 0.1 0.3 Drain to Source Voltage Ta (°C) Typical Transfer Characteristics 0 0.4 4 0 (V) Gate to Source Voltage DS 2SK2373 1 ms DS(on 100 V ( °C 25 ° –25 ° ( ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.4 0.3 0.2 0 Gate to Source Voltage Forward Transfer Admittance vs. Drain Current 1 0 –25 °C 0.2 25 °C 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 Drain Current I 4 Static Drain to Source on State Resistance 0.5 0.2 A 0 0.1 0.01 0. (V) GS 100 ° 0 ...
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... Reverse Drain Current vs. Source to Drain Voltage 0.5 Pulse Test 0.4 0 0.2 0.1 0 0.4 0.8 1.2 Source to Drain Voltage V 2SK2373 1.6 2.0 ( ...
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Hitachi Code MPAK JEDEC — EIAJ Conforms Weight (reference value) 0.011 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...