2SK2375 Panasonic Semiconductor, 2SK2375 Datasheet - Page 2

• Manufacturer Part Number: 2SK2375
• Description: Silicon N-Channel Power F-MOS FET
• Manufacturer: Panasonic Semiconductor

Power F-MOS FETs
2
100
0.3
0.1
30
10
6
5
4
3
2
1
0
3
1
6
5
4
3
2
1
0
1
0
0
Area of safe operation (ASO)
Drain to source voltage V
V
I
DP
D
DS
Case temperature T
=25V
1
25
3
Drain current I
2
1ms
| Y
25˚C
10
50
V
10ms
3
100ms
th
fs
T
|
30
75
Non repetitive pulse
T
C
4
C
=0˚C
=25˚C
T
I
5
C
100
100
D
D
100˚C
C
6
( A )
150˚C
V
I
300
D
t=100 s
125
DS
DS
=1mA
( ˚C )
=25V
7
( V )
1000
150
8
10000
3000
1000
120
100
300
100
80
60
40
20
70
60
50
40
30
20
10
30
10
0
0
0
0
Gate to source voltage V
0
Drain to source voltage V
Ambient temperature Ta ( ˚C )
C
20
5
iss
40
40
, C
V
10
P
oss
DS
60
D
80
(1)
(2)
, C
(1) T
(2) Without heat sink
80 100 120 140 160
15
rss
(P
Ta
V
C
120
D
=Ta
=3W)
GS
20
V
T
f=1MHz
T
C
160
DS
GS
C
=25˚C
I
DS
25
D
=25˚C
=16A
C
C
C
8A
4A
2A
oss
iss
rss
( V )
( V )
200
30
600
500
400
300
200
100
7
6
5
4
3
2
1
0
5
4
3
2
1
0
0
0
0
0
Gate to source voltage V
V
DS
=25V
1
1
2
Drain current I
Drain current I
t
on
2
2
R
, t
I
DS(on)
4
D
f
3
3
, t
t
d(off)
d(off)
4
4
6
t
V
on
2SK2375
GS
5
5
I
D
D
8
D
150˚C
100˚C
25˚C
0˚C
t
V
V
T
I
f
6
6
( A )
( A )
T
DD
GS
C
D
T
V
=25˚C
C
C
GS
GS
=200V
=10V
=150˚C
10
25˚C
0˚C
=150˚C
100˚C
7
=10V
7
( V )
12
8
8