2SK2393 Hitachi Semiconductor, 2SK2393 Datasheet
2SK2393
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2SK2393 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline 2SK2393 TO-3PL Gate 2. Drain (Flange) 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Electrical Characteristics (Ta = 25°C) ...
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... R 0 °C 0.1 200 20 50 Drain to Source Voltage Typical Transfer Characteristics Pulse Test (V) Gate to Source Voltage DS 2SK2393 DS(on) 100 200 500 1000 2000 V ( 75°C 25°C –25° ( ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test – Case Temperature 4 Static Drain to Source on State Resistance 20 Pulse Test ...
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... I (A) Drain to Source Voltage V DR 2000 20 1000 16 500 200 8 100 0.1 0.2 160 200 2SK2393 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss = (V) DS Switching Characteristics µs, duty < d(off d(on) 0 ...
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... Switching Time Test Circuit Vin Monitor D.U.T. Vin Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test – 0.2 0.4 0.6 Source to Drain Voltage V Vout Monitor R L Vin V DD Vout = 30 V td(on) 0.8 1.0 (V) SD Waveform 90% 10% 10% 10% 90% 90% td(off) ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-3PL — — 9.9 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...