2SK2538 Panasonic Semiconductor, 2SK2538 Datasheet
2SK2538
Manufacturer Part Number
2SK2538
Description
Silicon N-Channel Power F-MOS
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2538.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2538
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Power F-MOS FETs
2 S K 2 5 3 8
Silicon N-Channel Power F-MOS
* L= 5mH, I
Avalanche energy capability guaranteed
High-speed switching
No secondary breakdown
High-speed switching (switching mode regulator)
For high-frequency power amplification
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Features
Applications
Absolute Maximum Ratings (Tc = 25˚C)
Electrical Characteristics (Tc = 25˚C)
L
= 2A, V
Parameter
Parameter
DD
= 30V, 1 pulse
DC
Pulse
T
Ta= 25˚C
C
= 25˚C
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
Symbol
Symbol
d(on)
r
f
d(off)
V
V
I
I
EAS
P
T
T
DSS
GSS
D
DP
DSS
th
DS(on)
DSF
iss
oss
rss
th(ch-c)
th(ch-a)
D
ch
stg
DSS
GSS
fs
|
*
–55 to +150
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
=1mA, V
Rating
= 2A, V
250
±30
150
= 200V, V
=±30V, V
=10V, I
=10V, I
= 25V, I
=10V, V
=10V, R
= 200V, I
±2
±4
10
30
2
GS
GS
D
D
D
GS
L
Condition
=1mA
=1A
=1A
=100
DS
= 0
= 0
D
GS
= 0, f=1MHz
= 2A
= 0
= 0
Unit
mJ
˚C
˚C
W
V
V
A
A
Min
250
0.5
1
1
10.0 0.2
5.08 0.5
5.5 0.2
2
Typ
220
1.2
60
20
10
20
45
90
1
TO-220 Full Pack Package (a)
3
2.54 0.25
1.4 0.1
0.8 0.1
ø3.1 0.1
2.7 0.2
Max
–1.6
4.17
62.5
100
±1
1.3 0.2
0.5
5
2
2SK2538
+0.2
-0.1
4.2 0.2
1 : Gate
2 : Drain
3 : Source
Unit : mm
˚C/W
˚C/W
Unit
µ A
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
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2SK2538 Summary of contents
Page 1
... D V =10V 25V =10V f=1MHz 200V =10V, R =100 GS L 2SK2538 Unit : mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 ø3.1 0.1 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 2.54 0.25 5.08 0 Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) Min Typ Max Unit 100 µ A ±1 µ A 250 V ...
Page 2
... DS 1000 f=1MHz T =25˚C C 300 C iss 100 30 C oss 10 C rss 100 150 200 250 ( V ) Drain-Source voltage V DS 2SK2538 EAS – =30V 100 125 150 175 Junction temperature T (˚ – I ...
Page 3
... Pulse width t – Notes: R was measured at Ta=25˚C th and under natural convection. (1) P =10V 0.2A(2W) and without heat sink T (2) P =10V 1.0A(10W) and T with a 100 100 2mm Al heat sink (1) ( 2SK2538 ...