2SK3133 Hitachi Semiconductor, 2SK3133 Datasheet
2SK3133
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2SK3133 Summary of contents
Page 1
... Features Low on-resistance typ. DS(on) Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Gate 2 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Electrical Characteristics ( Item ...
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... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) 2SK3133(L),2SK3133(S) 150 200 3 ...
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... Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 +0.2 0.86 –0.1 2.54 ± 0.5 S type LDPAK Hitachi Code EIAJ JEDEC Unit: mm — — ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...