2SK971 Hitachi Semiconductor, 2SK971 Datasheet

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2SK971

Manufacturer Part Number
2SK971
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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2SK971
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
• Suitable for motor drive, DC-DC converter,
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body to drain diode reverse drain current
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
– Can be driven from 5 V source
power switch and solenoid drive
PW 10 µs, duty cycle 1 %
Value at T
C
= 25 °C
Symbol
V
V
I
I
I
Pch**
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
*
TO–220AB
1
Ratings
60
±20
15
60
15
40
150
–55 to +150
2
3
Unit
V
V
A
A
A
W
°C
°C
1. Gate
2. Drain
3. Source
1
(Flange)
2
3

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2SK971 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Table 1 Absolute Maximum Ratings (Ta = 25° ...

Page 2

... Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...

Page 3

... C 20 Pulse Test (V) DS 2SK971 Maximum Safe Operation Area Ta = 25°C 0.3 1 100 Drain to Source Voltage V (V) DS Typical Transfer Characteristics Pulse Test –25°C 75° 25° ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0. 0.08 0. –40 0 Case Temperature T Pulse Test 0.005 ( ...

Page 5

... 1MHz 3000 Ciss 1000 Coss 300 Crss 100 Drain to Source Voltage V (V) DS Switching Characteristics 500 t d (off) 200 t 100 duty < (on 0.2 0.5 1 Drain Current I (A) D 2SK971 50 20 ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test 0.4 0.8 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 1.2 1.6 2.0 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c (t) = (t) · ch–c S ch– ...

Page 7

... Switching Time Test Circuit Vin Monitor 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK971 Wavewforms (off ...

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