SI4559EY Vishay Siliconix, SI4559EY Datasheet
SI4559EY
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SI4559EY Summary of contents
Page 1
... stg Symbol R thJA Si4559EY Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 60 – 4.5 3.1 3.8 2 2.0 –2.0 2 1.7 –55 to 175 ...
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... Si4559EY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage Gate-Body Leakage I I GSS GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current DSS DSS b b On-State Drain Current ...
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... 400 200 On-Resistance vs. Junction Temperature 2 1.9 1.6 1.3 1.0 0.7 0 –50 –25 Si4559EY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – ...
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... Si4559EY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 –0 250 A D –0.2 –0.4 –0.6 –0.8 –1.0 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... 200 C rss On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0 –50 –25 Si4559EY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss – Drain-to-Source Voltage (V) ...
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... Si4559EY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.75 0. 250 A D 0.25 0.00 –0.25 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...