SI4860DY Vishay Siliconix, SI4860DY Datasheet
SI4860DY
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SI4860DY Summary of contents
Page 1
... D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier N-Channel MOSFET 10 secs Steady State 30 DS " " 3.0 1.40 S 3.5 1 2.2 1.0 -55 to 150 stg Typical Maximum 29 35 thJA thJF Si4860DY Unit Unit _C/W www.vishay.com 1 ...
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... Si4860DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Document Number: 71752 S-03662—Rev. C, 14-Apr-03 New Product 0.040 0.032 0.024 0.016 T = 25_C J 0.008 0.000 0.8 1.0 1.2 Si4860DY Vishay Siliconix Capacitance 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
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... Si4860DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 = 250 0.3 0.0 -0.3 -0.6 -0.9 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 Duty Cycle = 0.5 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...