SI4880DY Vishay Siliconix, SI4880DY Datasheet

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SI4880DY

Manufacturer Part Number
SI4880DY
Description
N-Channel Reduced Qg/ Fast Switching MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
Document Number: 70857
S-60711—Rev. A, 01-Feb-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 s Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
V
Surface Mounted on FR4 Board.
t
DS
30
30
10 sec.
(V)
G
S
S
S
1
2
3
4
N-Channel Reduced Q
Top View
J
J
SO-8
a, b
a, b
0.0085 @ V
0.014 @ V
= 150 C)
= 150 C)
r
DS(on)
Parameter
Parameter
a, b
a, b
GS
GS
a
a
( )
8
7
6
5
= 4.5 V
= 10 V
a, b
D
D
D
D
I
N-Channel MOSFET
New Product
D
(A)
13
10
Steady State
t
T
T
T
T
A
A
A
A
g
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
, Fast Switching MOSFET
G
D
S
D
Symbol
Symbol
T
R
R
D
S S
V
J
V
I
P
P
, T
DM
thJA
thJA
I
I
I
DS
GS
D
D
S
D
D
stg
D
Typical
70
www.vishay.com FaxBack 408-970-5600
–55 to 150
Limit
2.3
2.5
1.6
30
Vishay Siliconix
25
13
10
50
Maximum
50
Si4880DY
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI4880DY Summary of contents

Page 1

... stg Symbol Typical t 10 sec R R thJA thJA Steady State 70 www.vishay.com FaxBack 408-970-5600 Si4880DY Vishay Siliconix Limit Unit 2.3 2 1.6 –55 to 150 C Maximum Unit 50 C/W C/W 2-1 ...

Page 2

... Si4880DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... 2500 2000 1500 1000 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si4880DY Vishay Siliconix Transfer Characteristics T = 125 C C – 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si4880DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 1.0 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –0.8 –1.0 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...

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