BUL45_06 ON Semiconductor, BUL45_06 Datasheet - Page 2

• Manufacturer Part Number: BUL45_06
• Description: NPN Silicon Power Transistor
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS: Resistive Load
SWITCHING CHARACTERISTICS: Inductive Load (V
Collector−Emitter Sustaining Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current (V
Emitter Cutoff Current (V
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage (I
Collector−Emitter Saturation Voltage (I
DC Current Gain (I
Current Gain Bandwidth (I
Output Capacitance (V
Input Capacitance (V
Dynamic Saturation Voltage:
Determined 1.0 ms and 3.0 ms
respectively after rising I
reaches 90% of final I
(see Figure 18)
Turn−On Time
Turn−Off Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
(I
(I
(I
(I
C
C
C
C
= 1.0 Adc, I
= 2.0 Adc, I
= 2.0 Adc, V
= 10 mAdc, V
C
B
B
= 0.3 Adc, V
CE
EB
= 0.2 Adc)
= 0.4 Adc)
B1
CE
CB
= 1.0 Vdc)
= 8.0 Vdc)
B1
EB
= 5.0 Vdc)
C
= 10 Vdc, I
CE
CE
= 9.0 Vdc, I
= 0.5 Adc, V
= Rated V
= Rated V
Characteristic
(I
I
V
(I
I
V
(I
Pulse Width = 20 ms,
Duty Cycle < 20% V
(I
I
(I
I
(I
I
CE
B1
B1
B2
B2
B2
C
C
C
C
C
C
CC
CC
= 1.0 Adc
= 2.0 Adc
= 2.0 Adc, I
= 2.0 Adc, I
= 1.0 Adc, I
= 2.0 Adc, I
= 5.0 Vdc)
= 100 mAdc
= 400 mAdc
= 0.4 Adc)
= 0.5 Adc)
= 2.0 Adc)
E
= 300 V)
= 300 V)
C
C
C
= 0, f = 1.0 MHz)
C
CEO
CES
= 1.0 Adc, I
= 2.0 Adc, I
CE
= 100 mA, L = 25 mH)
= 0)
(T
, V
= 10 Vdc, f = 1.0 MHz)
, I
C
B
= 25°C unless otherwise noted)
EB
= 0)
B1
B1
B1
B1
= 0)
(T
(T
(T
(T
(T
= I
= 0.4 Adc
= 100 mAdc
= 250 mAdc
B
B
C
C
C
C
C
1.0 ms
3.0 ms
1.0 ms
3.0 ms
CC
B2
= 0.2 Adc)
= 0.4 Adc)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
CC
= 0.4 Adc
= 300 V
http://onsemi.com
= 15 Vdc, L
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
(T
BUL45
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
= 125°C)
= 125°C)
= 125°C)
= 125°C)
2
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
= 125°C)
C
= 200 mH, V
V
(Dyn sat)
Symbol
V
V
V
CEO(sus)
CE(sat)
CE(sat)
I
I
I
BE(sat)
V
h
C
CEO
CES
EBO
C
t
t
clamp
f
t
t
t
on
off
t
t
t
t
t
t
FE
CE
si
si
si
T
ob
fi
c
fi
c
fi
c
ib
= 300 Vdc)
Min
400
7.0
5.0
2.6
14
10
70
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.175
0.150
0.275
0.84
0.89
0.25
1.75
1.85
Typ
920
120
200
230
400
110
100
170
170
175
4.4
0.5
1.0
6.0
0.5
1.0
2.8
3.5
4.2
1.1
1.5
0.6
32
14
12
22
12
50
75
80
−
−
−
−
−
−
−
−
1200
Max
1.25
0.25
100
100
100
170
350
150
250
120
300
110
1.2
0.4
3.5
3.8
1.7
0.9
10
34
75
—
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ms
ns
ms
ns
ns
ms
ns
ns
ms
ns
−