BUL45_06 ON Semiconductor, BUL45_06 Datasheet - Page 3

• Manufacturer Part Number: BUL45_06
• Description: NPN Silicon Power Transistor
• Manufacturer: ON Semiconductor

100
2.0
1.5
1.0
0.5
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
10
1
0.01
0
0.01
0.01
Figure 3. Collector−Emitter Saturation Region
I
C
T
T
T
J
J
= 0.5 A
T
Figure 5. Base−Emitter Saturation Region
J
= 125°C
J
= 125°C
= −20°C
= 25°C
Figure 1. DC Current Gain @ 1 Volt
1 A
I
I
C
C
1.5
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
A
I
0.10
B
0.10
0.10
T
, BASE CURRENT (AMPS)
J
2A
= 25°C
3 A
4 A 5 A
1.00
1.00
1.00
TYPICAL STATIC CHARACTERISTICS
6 A
I
I
C
C
T
V
/I
/I
J
CE
B
B
= 25°C
http://onsemi.com
= 10
= 5
= 1 V
10.00
10.00
10.00
BUL45
3
10000
1000
0.01
100
100
1.0
0.1
10
10
10
1
1
0.01
0.01
1
Figure 4. Collector−Emitter Saturation Voltage
T
I
I
T
C
J
C
J
/I
= 125°C
/I
B
= −20°C
B
Figure 2. DC Current Gain at @ 5 Volts
= 10
= 5
V
C
C
CE
ob
ib
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
Figure 6. Capacitance
0.10
0.10
10
T
J
= 25°C
1.00
1.00
100
T
T
J
J
T
f = 1 MHz
V
= 25°C
= 125°C
J
CE
= 25°C
= 5 V
10.00
10.00
1000