BUL45_06 ON Semiconductor, BUL45_06 Datasheet - Page 7

• Manufacturer Part Number: BUL45_06
• Description: NPN Silicon Power Transistor
• Manufacturer: ON Semiconductor

designed for use in electronic lamp ballasts. A circuit
designed by ON Semiconductor applications was built to
FUSE
The BUL45 Bipolar Power Transistors were specially
NOTES:
AC LINE
220 V
1. Since this design does not include the line input filter, it cannot be used “as−is” in a practical industrial circuit.
2. The windings are given for a 55 Watt load. For proper operation they must be re−calculated with any other loads.
CTN
CTN =
Q1 =
D1 =
D2 =
D3 =
D5 =
D7 =
T1 =
D10
L =
D8
Q2 = BUL45 Transistor
1N4007 Rectifier
1N5761 Rectifier
D4 = MUR150
D6 = MUR105
D8 = D9 = D10 = 1N400
47 W @ 25°C
RM10 core, A1 = 400, B51 (LCC) 75 turns,
wire ∅ = 0.6 mm
FT10 toroid, T4A (LCC)
Primary: 4 turns
Secondaries: T1A: 4 turns
Secondaries:
D7
D9
22 mF
T1B: 4 turns
C1
385 V
0.1 mF
C2
100 V
470
kW
Figure 21. Application Example
D1
D2
1N4007
1N5761
Components Lists
http://onsemi.com
MUR150
MUR150
BUL45
D3
D4
7
1 W
1 W
demonstrate how well these devices operate. The circuit and
detailed component list are provided below.
I
I
C
C
T1B
Q1
Q2
R1 =
R2 =
R4 =
C1 =
C2 =
C3 =
C4 =
C5 =
All resistors are 1/4 Watt, ±5%
D6
47 W
470 kW
R3 = 47 W
R5 = 1 W (these resistors are optional, and
might be replaced by a short circuit)
22 mF/385 V
0.1 mF
10 nF/1000 V
15 nF/1000 V
C6 = 0.1 mF/400 V
T1A
47
W
D5
1000 V
15 mF
5.5 mH
L
C4
TUBE
C3 1000 V
10 nF
C5
C6
400 V
0.1 mF
400 V
0.1 mF