BUL45_06 ON Semiconductor, BUL45_06 Datasheet - Page 6

• Manufacturer Part Number: BUL45_06
• Description: NPN Silicon Power Transistor
• Manufacturer: ON Semiconductor

COMMON
+15 V
+10 V
−V
−1
−2
−3
−4
−5
Figure 18. Dynamic Saturation Voltage Measurements
5
4
3
2
1
0
off
0
1.00
0.10
0.01
1 mF
V
0.01
I
CE
B
MPF930
D = 0.5
50 W
0.05
0.02
0.2
0.1
1
1 ms
SINGLE PULSE
90% I
dyn 1 ms
2
150 W
3 W
500 mF
B
3 ms
MPF930
3
100 W
3 W
0.10
dyn 3 ms
TIME
4
Figure 20. Typical Thermal Response (Z
150 W
3 W
Table 1. Inductive Load Switching Drive Circuit
5
MTP8P10
MJE210
TYPICAL THERMAL RESPONSE
MUR105
6
MTP12N10
MTP8P10
1.00
http://onsemi.com
7
BUL45
8
t, TIME (ms)
R
R
B1
B2
6
A
1 mF
I
out
10
9
8
7
6
5
4
3
2
1
0
100 mF
0
P
V
Figure 19. Inductive Switching Measurements
I
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
V
I
(pk)
t
t
B
C
DUTY CYCLE, D = t
1
2
I
CLAMP
C
CC
(pk) = 100 mA
10.00
= 20 VOLTS
1
V
CE
I
B
qJC
(t)) for BUL45
90% I
I
2
B
10% V
1
B
1
1
CLAMP
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
V
RB1 SELECTED FOR
DESIRED I
/t
3
2
CC
V
CE
I
= 15 VOLTS
B
t
si
PEAK
2
TIME
R
R
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
T
J(pk)
qJC
qJC
4
B
100.00
1
(t) = r(t) R
= 2.5°C/W MAX
− T
C
5
= P
t
(pk)
qJC
c
I
C
90% I
R
PEAK
t
fi
6
qJC
RBSOA
L = 500 mH
RB2 = 0
V
RB1 SELECTED
FOR DESIRED I
CC
C
(t)
= 15 VOLTS
1
10% I
7
1000.00
C
B
8
1