BUL45_06 ON Semiconductor, BUL45_06 Datasheet - Page 4

• Manufacturer Part Number: BUL45_06
• Description: NPN Silicon Power Transistor
• Manufacturer: ON Semiconductor

1200
1000
3500
3000
2500
2000
1500
1000
800
600
400
200
500
300
250
200
150
100
50
0
0
0
0
0
0
Figure 11. Inductive Switching, t
V
I
L
V
B(off)
C
CC
Z
I
V
PW = 20 ms
B(off)
= 200 mH
= 300 V
CC
= 15 V
1
= I
Figure 9. Inductive Storage Time, t
= 300 V
= I
Figure 7. Resistive Switching, t
C
/2
C
I
1
1
T
T
C
/2
J
J
/I
I
I
I
B
= 25°C
= 125°C
C
C
C
2
= 10
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
3
2
2
t
t
fi
c
4
T
T
I
I
C
C
J
J
/I
/I
= 25°C
= 125°C
TYPICAL SWITCHING CHARACTERISTICS
B
B
3
3
= 10
= 5
5
c
& t
6
(I
V
V
I
L
B(off)
fi
I
C
Z
CC
B2
C
4
4
, I
T
T
on
/I
= 300 V
= 200 mH
J
J
B
= 15 V
C
= 25°C
= 125°C
= I
si
= I
= 5
http://onsemi.com
/I
7
C
B
/2
C
= 5
/2 for all switching)
BUL45
8
5
5
4
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
500
500
200
150
100
50
0
0
0
0
3
0
Figure 12. Inductive Switching, t
I
C
/I
I
V
V
L
Figure 10. Inductive Storage Time, t
B(off)
B
C
4
CC
Z
= 10
= 200 mH
= 300 V
1
= 15 V
= I
Figure 8. Resistive Switching, t
5
I
C
C
/2
1
/I
B
I
I
= 5
2
C
6
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
I
C
= 2 A
7
h
3
FE
2
I
, FORCED GAIN
C
8
= 1 A
4
9
t
T
T
T
T
fi
10
J
J
J
J
3
= 25°C
= 125°C
= 25°C
= 125°C
5
11
c
& t
t
c
12
6
fi
I
V
PW = 20 ms
, I
I
L
V
V
B(off)
4
B(off)
off
T
T
CC
C
si
Z
CC
13
C
J
J
= 200 mH
= 300 V
(h
= 25°C
= 125°C
/I
= 300 V
= 15 V
= I
7
= I
B
FE
C
14
C
= 10
/2
)
/2
15
5
8