2SJ506 Hitachi Semiconductor, 2SJ506 Datasheet

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2SJ506

Manufacturer Part Number
2SJ506
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low on-resistance
R
Low drive current
High speed switching
4V gate drive devices.
DS(on)
= 0.065
typ. (at V
G
2SJ506(L), 2SJ506(S)
High Speed Power Switching
Silicon P Channel MOS FET
GS
= –10V, I
DPAK–2
D
S
D
= –5A)
1 2
3
4
1 2
Target Specification 1st. Edition
3
1. Gate
2. Drain
3. Source
4. Drain
4
ADE-208-548

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2SJ506 Summary of contents

Page 1

... Silicon P Channel MOS FET High Speed Power Switching Features Low on-resistance R = 0.065 typ. (at V DS(on) Low drive current High speed switching 4V gate drive devices. Outline G = –10V –5A DPAK– ADE-208-548 Target Specification 1st. Edition Gate 2 ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol Ratings V – ...

Page 3

... DF — 65 — 2SJ506(L), 2SJ506(S) Unit Test Conditions –10mA 100 – 16V ...

Page 4

... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –8 V –10 V –20 –4.5 V –5 V –6 V –16 –12 –8 – –4 –8 Drain to Source Voltage 4 –500 –200 –100 –50 –20 –10 –5 –2 –1 – ...

Page 5

... Forward Transfer Admittance vs. 100 – – – –2,– 0.5 –0.2 –0.5 –1 –2 –0.1 120 160 ( C) 2SJ506(L), 2SJ506(S) vs. Drain Current = –4 V –10 V Pulse Test –50 –100 –10 –20 –5 Drain Current I (A) D Drain Current Tc = – – ...

Page 6

... Body to Drain Diode Reverse Recovery Time 100 –2 –0.5 –1 –0.1 –0.2 Reverse Drain Current Dynamic Input Characteristics – –10 V –25 V –10 –20 V – – – – ...

Page 7

... Reverse Drain Current vs. Source to Drain Voltage Pulse Test –5 V – 0 –0.4 –0.8 –1.2 –1 – c( (t) • ch – 6.25 C/ 100 m Pulse Width PW (S) 2SJ506(L), 2SJ506(S) –2 – ...

Page 8

... Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – Vout Vin Monitor –10 V Vout td(on) Waveforms 10% 90% 90% 90% 10% 10% td(off ...

Page 9

... Package Dimensions 6.5 0.5 5.4 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 0.55 0.1 type L 2.3 0.2 0.55 0.1 6.5 0.5 5.4 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 typ S type 2SJ506(L), 2SJ506(S) Unit: mm 2.3 0.5 0.55 0 0.25 0.55 0.1 Hitachi DPAK–2 EIAJ ( L type) SC–63 SC–64 EIAJ ( S type) JEDEC — 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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