2SJ518 Hitachi Semiconductor, 2SJ518 Datasheet - Page 5

• Manufacturer Part Number: 2SJ518
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

–100
100
–20
–40
–60
–80
50
20
10
–0.1 –0.2
0
0
V
I
Reverse Drain Current
D
DS
= –2 A
Dynamic Input Characteristics
Body–Drain Diode Reverse
4
Gate Charge
V
V
DD
–0.5
GS
Recovery Time
= –10 V
8
–25 V
–50 V
di / dt = 50 A / µs
V
V
GS
–1
DD
= 0, Ta = 25 °C
12
= –10 V
–2
Qg (nc)
–25 V
–50 V
I
DR
16
–5
(A)
–10
20
0
–4
–8
–12
–16
–20
1000
100
300
100
30
10
50
20
10
–0.1 –0.2
3
1
5
2
1
0
V
f = 1 MHz
Drain to Source Voltage V
GS
–10
Switching Characteristics
= 0
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
V
Ta = 25°C, duty < 1 %
t
–0.5 –1
GS
d(on)
–20
t
= –10 V, V
t f
d(off)
r t
Coss
Ciss
Crss
–30
–2
I
D
DD
(A)
–40
= –30 V
DS
–5
(V)
2SJ518
–50
–10
5