2SJ528 Hitachi Semiconductor, 2SJ528 Datasheet - Page 3

• Manufacturer Part Number: 2SJ528
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–10
–8
–6
–4
–2
40
30
20
10
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Case Temperature
Typical Output Characteristics
–2
50
–10 V
–5 V
–6 V
–4
–4 V
100
V
GS
–6
Pulse Test
= –2.5 V
Tc ( C)
–3.5 V
150
V
–3 V
–8
DS
(V)
–10
200
–0.03
–0.01
–100
–0.3
–0.1
–10
–30
–10
–8
–6
–4
–2
–3
–1
–0.1 –0.3
0
Ta = 25 C
V
Drain to Source Voltage
Pulse Test
Gate to Source Voltage
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
–1
= –10 V
Operation in
this area is
limited by R
Tc = 75 C
–1
2SJ528(L),2SJ528(S)
–2
–3
DS(on)
–3
–10
25 C
–25 C
V
10 s
V
–4
–30
DS
GS
(V)
(V)
–100
–5
3