2SJ529 Hitachi Semiconductor, 2SJ529 Datasheet

no-image

2SJ529

Manufacturer Part Number
2SJ529
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ529(L,S)
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SJ529L
Manufacturer:
RENESAS
Quantity:
30 000
Part Number:
2SJ529S
Manufacturer:
RENESAS
Quantity:
30 000
Part Number:
2SJ529STL
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Features
Outline
Low on-resistance
R
4 V gete drive devices
High speed switching
DS(on)
= 0.12
typ.
G
2SJ529(L),2SJ529(S)
High Speed Power Switching
Silicon P Channel MOS FET
DPAK–2
D
S
1 2
3
4
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
4
ADE-208-654A (Z)
2nd. Edition
Jun 1998

Related parts for 2SJ529

2SJ529 Summary of contents

Page 1

... Features Low on-resistance R = 0.12 typ. DS(on gete drive devices High speed switching Outline G Silicon P Channel MOS FET High Speed Power Switching DPAK– ADE-208-654A (Z) 2nd. Edition Gate 2. Drain 3. Source 4. Drain Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... V –8 Pulse Test –6 –3 V –4 –2 –2 – –6 –8 –10 V (V) DS 2SJ529(L),2SJ529(S) Maximum Safe Operation Area Operation in this area is limited by R DS(on –0.1 –0.3 –1 –3 –10 Drain to Source Voltage V Typical Transfer Characteristics V = – ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –0.8 –0.6 –0.4 –0.2 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0 – 0.2 0.1 – – Case Temperature 4 Pulse Test 0.5 0 – 0.1 0.05 –2 A –1 A ...

Page 5

... DR Drain to Source Voltage V 0 1000 300 –4 100 = – –8 30 –12 10 –16 3 – –0.1 –0.2 2SJ529(L),2SJ529(S) Typical Capacitance vs. Drain to Source Voltage MHz Ciss Crss Coss –10 –20 –30 –40 –50 (V) DS Switching Characteristics V = – –30 V ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –10 –8 –6 –10 V –4 –5 V –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – Pulse Test –1.6 –2 ( ...

Page 7

... Vin Monitor D.U. Vin 50 = –30 V – – c( (t) • ch – 6.25 °C/ ° Pulse Width PW (S) Vout Vin Monitor L DD Vout td(on) 2SJ529(L),2SJ529( 25°C ch – 100 m 1 Waveform 10% 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 6.5 ± 0.5 5.4 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 L type 8 2.3 ± 0.2 0.55 ± 0.1 6.5 ± 0.5 5.4 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 1.2 typ S type Unit: mm 2.3 ± 0.5 0.55 ± 0 0.25 0.55 ± 0.1 Hitachi DPAK–2 EIAJ ( L type) SC–63 EIAJ ( S type) SC–64 JEDEC — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

Related keywords