2SJ540 Hitachi Semiconductor, 2SJ540 Datasheet

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2SJ540

Manufacturer Part Number
2SJ540
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ540
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current
4 V gete drive devices
High speed switching
DS(on)
= 0.11
typ.
G
TO–220AB
High Speed Power Switching
Silicon P Channel MOS FET
D
S
2SJ540
1
2
3
1. Gate
2. Drain
3. Source
(Flange)
ADE-208-642A (Z)
2nd. Edition
Jun 1998

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2SJ540 Summary of contents

Page 1

... Features Low on-resistance R = 0.11 typ. DS(on) Low drive current 4 V gete drive devices High speed switching Outline TO–220AB G 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A (Z) 1. Gate 2. Drain (Flange Source 2nd. Edition Jun 1998 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... Maximum Safe Operation Area Operation in this area is limited by R DS(on °C –1 –3 –10 –30 –100 Drain to Source Voltage V DS Typical Transfer Characteristics V = – Pulse Test °C 25 °C –25 °C –1 –2 –3 –4 Gate to Source Voltage V (V) GS 2SJ540 (V) –5 3 ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –0.8 –0.6 –0.4 –0.2 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0 –4 V 0.2 GS 0.1 – – Case Temperature 4 Static Drain to Source on State Resistance 1 Pulse Test ...

Page 5

... DR Drain to Source Voltage V 0 1000 = – 300 –4 100 –8 30 –12 10 –16 3 – –0.1 –0.2 40 2SJ540 Typical Capacitance vs. Drain to Source Voltage MHz Ciss Crss Coss –10 –20 –30 –40 –50 (V) DS Switching Characteristics V = – –30 V ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage –10 –8 –6 –10 V –4 –5 V –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 50 – Pulse Test 0 –1.6 –2 ( Monitor D ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – – c( (t) • ch – 2.5 °C/ ° 100 m Pulse Width PW (S) Vout Vin Monitor –30 V Vout td(on) 2SJ540 Tc = 25°C ch – Waveform 10% 90% 90% 90% 10% 10% td(off ...

Page 8

... Package Dimensions 10.16±0.2 9.5 8.0 1.2±0.1 1.27±0.1 1.5 max 0.76 ±0.1 2.54 ±0.5 2.54 ±0 0.1 4.44±0.2 f 3.6 – 0.08 1.26±0.15 0.5±0.1 2.7 max Unit: mm Hitachi Code TO–220AB SC–46 EIAJ — JEDEC ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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