2SJ547 Hitachi Semiconductor, 2SJ547 Datasheet - Page 5

• Manufacturer Part Number: 2SJ547
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

–100
500
200
100
–20
–40
–60
–80
50
20
10
–0.1
5
0
0
Reverse Drain Current
Dynamic Input Characteristics
Body–Drain Diode Reverse
–0.3
8
Gate Charge
V
DD
Recovery Time
= –10 V
V
16
–25 V
–50 V
GS
–1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
V
24
Qg (nc)
DD
–3
I
= –10 V
D
I
V
DR
= –10 A
–25 V
–50 V
32
DS
–10
(A)
–20
40
0
–4
–8
–12
–16
–20
1000
5000
1000
300
100
300
100
30
10
30
10
–0.1
3
1
0
Drain to Source Voltage V
–0.3
t f
–10
r t
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
V
Pw = 5 µs, duty < 1 %
GS
–20
= –10 V, V
–1
t
d(off)
–30
Ciss
Coss
Crss
–3
I
DD
D
V
f = 1 MHz
t
= –30 V
–40
(A)
d(on)
GS
DS
–10 –20
= 0
2SJ547
(V)
–50
5