2SJ549L Hitachi Semiconductor, 2SJ549L Datasheet - Page 6

• Manufacturer Part Number: 2SJ549L
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SJ549(L),2SJ549(S)
6
Vin
–15 V
–10
–8
–6
–4
–2
0
Source to Drain Voltage
–10 V
–0.4
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Test Circuit
V
Monitor
50
–5 V
–0.8
DS
Rg
–1.2
V
GS
Pulse Test
= 0, 5 V
D. U. T
V
–1.6
I
Monitor
SD
AP
L
(V)
–2.0
V
DD
0
V
20
16
12
DD
8
4
0
25
E
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Channel Temperature Tch (°C)
I
=
AP
50
1
2
I
• L • I
Avalanche Waveform
D
75
AP
2
•
I
V
duty < 0.1 %
Rg > 50
100
AP
DD
V
= –12 A
= –25 V
DSS
V
125
DSS
V
– V
DS
V
DD
(BR)DSS
150