2SJ552 Hitachi Semiconductor, 2SJ552 Datasheet - Page 3

• Manufacturer Part Number: 2SJ552
• Description: Silicon P Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
–50
–40
–30
–20
–10
80
60
40
20
0
0
–10 V
–8 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–2
50
–4
–5 V
–4.5 V
100
–6 V
–6
V
GS
Tc (°C)
Pulse Test
–3.5 V
150
V
–4 V
–3 V
= –2.5 V
DS
–8
(V)
–10
200
–1000
–300
–100
–0.3
–0.1
–30
–10
–50
–40
–30
–20
–10
–3
–1
–0.1 –0.3
0
Ta = 25 °C
Drain to Source Voltage
V
Pulse Test
Gate to Source Voltage
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
Operation in
this area is
limited by R
–1
= –10 V
75 °C
–1
2SJ552(L),2SJ552(S)
–2
DS(on)
–3
Tc = –25 °C
–3
–10
25 °C
V
V
GS
–4
DS
–30
(V)
(V)
–100
–5
3