2SJ635 Sanyo Semicon Device, 2SJ635 Datasheet - Page 2

• Manufacturer Part Number: 2SJ635
• Description: P-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: Sanyo Semicon Device

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Package Dimensions
unit : mm
7518-004
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.85
--10V
PW=10 s
D.C. 1%
0.7
0.6
P.G
0V
1
V IN
2.3
6.5
5.0
2
4
Parameter
2.3
V IN
3
50
G
V DD = --30V
D
2.3
S
I D = --6A
R L =5
0.5
0.5
1.2
V OUT
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Symbol
t d (on)
t d (off)
2SJ635
Qgd
V SD
Qgs
Qg
t r
t f
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--30V, V GS =- -10V, I D =--12A
V DS =--30V, V GS =- -10V, I D =--12A
V DS =--30V, V GS =- -10V, I D =--12A
I S =--12A, V GS =0V
2SJ635
Package Dimensions
unit : mm
7003-004
0.85
Conditions
0.6
1
2.3
6.5
5.0
4
2
2.3
3
0.5
min
2.3
0.5
1.2
0 to 0.2
Ratings
typ
--0.9
200
125
18
80
45
10
7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
max
--1.2
No.8277-2/4
Unit
nC
nC
nC
ns
ns
ns
ns
V